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| Ordering number : ENN6639 5HN01SP N-Channel Silicon MOSFET 5HN01SP Ultrahigh-Speed Switching Applications Features * * * Package Dimensions unit : mm 2180 4.0 Low ON-resistance. Ultrahigh-speed switching. 4V drive. [5HN01SP] 3.0 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 12 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 1 : Source 2 : Drain 3 : Gate SANYO : SPA Ratings 50 20 0.1 0.4 0.25 150 --55 to +150 Unit V V A A W C C 3.0 3.8nom Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=100A Ratings min 50 10 10 1 2.4 typ max Unit V A A V 0.7 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-2034 No.6639-1/4 5HN01SP Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=50mA ID=50mA, VGS=10V ID=30mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0 Ratings min 85 typ 120 5.8 7.5 6.2 4.4 1.5 10 11 105 75 1.40 0.21 0.34 0.85 1.2 7.5 10.5 max Unit mS pF pF pF ns ns ns ns nC nC nC V Marking : YC Switching Time Test Circuit 10V 0V VIN VIN VDD=25V ID=50mA RL=500 PW=10s D.C.1% D G VOUT 5HN01SP P.G 50 S 0.10 ID -- VDS 8.0 V 0.20 0.18 ID -- VGS VDS=10V Ta= --25 C 75C 0 1 2 3 6. 0V 0.08 0.16 Drain Current, ID -- A Drain Current, ID -- A .0V 0.14 0.12 0.10 0.08 0.06 0.04 0.06 0.04 10 2.5V 0.02 VGS=2.0V 0 0 0.2 0.4 0.6 0.8 1.0 IT00042 0.02 0 4 5 IT00043 Drain-to-Source Voltage, VDS -- V 12 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 100 RDS(on) -- ID 25 4. 0V 3.0 V C Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- 11 10 9 7 VGS=10V Static Drain-to-Source On-State Resistance, RDS(on) -- 5 3 2 50mA 8 10 7 5 3 2 ID=30mA 7 6 5 4 0 1 2 3 4 5 6 7 8 9 10 Ta=75C 25C --25C 1.0 0.01 2 3 5 7 0.1 2 3 Gate-to-Source Voltage, VGS -- V IT00044 Drain Current, ID -- A IT00045 No.6639-2/4 5HN01SP 100 7 RDS(on) -- ID VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- 14 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- 5 3 2 12 10 10 7 5 3 2 Ta=75C 25C 8 6 4V S= , VG 10V mA S= =30 , VG A ID 50m I D= --25C 4 2 0 --60 1.0 0.01 2 3 5 7 0.1 2 3 IT00046 --40 --20 0 20 40 60 80 100 120 140 160 Drain Current, ID -- A 1.0 yfs -- ID Ambient Temperature, Ta -- C 3 2 IT00047 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V 25C Forward Current, IF -- A 0.1 7 5 Ta= 0.1 7 5 3 2 --25C 75C 3 Ta= 7 5C 0.5 0.6 2 0.01 0.01 2 3 5 7 0.1 2 3 0.01 0.4 0.7 25C --25C 0.8 0.9 1.0 1.1 1.2 Drain Current, ID -- A 1000 7 5 IT00048 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 SW Time -- ID Diode Forward Voltage, VSD -- V IT00049 Ciss, Coss, Crss -- VDS f=1MHz VDD=25V VGS=10V td(off) tf tr td(on) Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 Ciss Coss Crss Drain Current, ID -- A 10 9 0.1 IT00050 0.30 0 5 10 15 20 25 30 35 40 45 50 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT00051 PD -- Ta Allowable Power Dissipation, PD -- W Gate-to-Sourse Voltage, VGS -- V VDS=10V ID=0.1A 0.25 8 7 6 5 4 3 2 1 0 0 0.3 0.6 0.9 1.2 1.5 IT00052 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Total Gate Charge, Qg -- nC Ambient Temperature, Ta -- C IT02382 No.6639-3/4 5HN01SP Note on usage : Since the 5HN01SP is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6639-4/4 |
Price & Availability of 5HN01SP
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